STGW25H120DF2 datasheet(9/17 Pages) STMICROELECTRONICS

Il numero della parte	STGW25H120DF2

Spiegazioni elettronici	Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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DocID023752 Rev 4

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STGW25H120DF2, STGWA25H120DF2

Electrical characteristics

17

Figure 20. Switching times vs. gate resistance

Figure 21. Reverse recovery current vs. diode

current slope

Figure 22. Reverse recovery time vs. diode

current slope

Figure 23. Reverse recovery charge vs. diode

current slope

Figure 24. Reverse recovery energy vs. diode

current slope

Figure 25. Diode VF vs. forward current

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