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STGW80V60F Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STGW80V60F
Spiegazioni elettronici  Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60F Scheda tecnica(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2014
DocID026386 Rev 1
1/19
19
STGFW80V60F, STGW80V60F,
STGWT80V60F
Trench gate field-stop IGBT, V series
600 V, 80 A very high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 80 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2 or TAB)
G (1)
E (3)
TO-247
1
2
3
TO-3P
1
2
3
TAB
111
1
2
3
TO-3PF
Table 1. Device summary
Order code
Marking
Package
Packaging
STGFW80V60F
GFW80V60F
TO-3PF
Tube
STGW80V60F
GW80V60F
TO-247
Tube
STGWT80V60F
GWT80V60F
TO-3P
Tube
www.st.com


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