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STGFW40H65FB Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STGFW40H65FB
Spiegazioni elettronici  Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW40H65FB Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STGFW40H65FB, STGW40H65FB,
STGWA40H65FB, STGWT40H65FB
Electrical ratings
DocID025171 Rev 7
3/21
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-247,
TO-247 long leads,
TO-3P
TO-3PF
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
80
A
Continuous collector current at TC = 100 °C
40
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
283
62.5
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
3.5
kV
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
°C
Notes:
(1)Pulse width is limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-247,
TO-247 long leads,
TO-3P
TO-3PF
RthJC
Thermal resistance junction-case
0.53
2.4
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W


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