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STGFW40H65FB Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STGFW40H65FB Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 21 page STGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB Electrical ratings DocID025171 Rev 7 3/21 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit TO-247, TO-247 long leads, TO-3P TO-3PF VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 80 A Continuous collector current at TC = 100 °C 40 ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 283 62.5 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 3.5 kV TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C Notes: (1)Pulse width is limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit TO-247, TO-247 long leads, TO-3P TO-3PF RthJC Thermal resistance junction-case 0.53 2.4 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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