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STGW30H65FB Scheda tecnica(PDF) 9 Page - STMicroelectronics |
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STGW30H65FB Scheda tecnica(HTML) 9 Page - STMicroelectronics |
9 / 20 page DocID025849 Rev 5 9/20 STGFW30H65FB, STGW30H65FB, STGWT30H65FB Electrical characteristics Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance t IC(A) (ns) 0 10 20 1 30 tf TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V tdoff 10 tr tdon 40 50 100 GIPG100720141533FSR t 10 RG(Ω) (ns) 010 20 100 30 tf TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V 40 tdon tdoff tr GIPG100720141549FSR Figure 22. Capacitance variations Figure 23. VCE(sat) vs. collector current C 10 VCE(V) (pF) 0.1 1 10 Cies 100 1000 Coes Cres 100 GIPG090720141358FSR VCE(sat) 1.6 1.4 1.2 0 30 IC(A) (V) 45 60 2.2 2.0 1.8 VGE= 15V TJ= 175°C TJ= 25°C TJ= -40°C 2.4 GIPG280120141446FSR Figure 24. Gate charge vs. gate-emitter voltage VGE (V) 4 2 0 0 Qg(nC) 40 80 120 160 6 8 10 12 14 VCC= 520V, IC= 30A IG= 1mA 16 GIPG280120141455FSR |
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