STGB30H60DF datasheet(5/24 Pages) STMICROELECTRONICS

Il numero della parte	STGB30H60DF

Spiegazioni elettronici	600 V, 30 A high speed trench gate field-stop IGBT

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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DocID022363 Rev 3

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STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

-

50

-

ns

tr

Current rise time

15

ns

(di/dt)on

Turn-on current slope

1600

A/µs

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

TJ = 175 °C

-

47

-

ns

tr

Current rise time

17

ns

(di/dt)on

Turn-on current slope

1400

A/µs

tr(Voff)

Off voltage rise time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

-

20

-

ns

td(off)

Turn-off delay time

160

ns

tf

Current fall time

60

ns

tr(Voff)

Off voltage rise time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

TJ = 175 °C

-

22

-

ns

td(off)

Turn-off delay time

146

ns

tf

Current fall time

88

ns

tsc

Short circuit withstand time

VCC ≤ 360 V, VGE = 15 V

3

6

-

µs

Table 7. Switching energy (inductive load)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Eon (1)

Turn-on switching losses

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

-0.35

-

mJ

Eoff

(2)

Turn-off switching losses

0.40

mJ

Ets

Total switching losses

0.75

mJ

Eon (1)

Turn-on switching losses

VCE = 400 V, IC = 230 A,

RG = 10 Ω, VGE = 15 V

TJ = 175 °C

0.61

mJ

Eoff

(2)

Turn-off switching losses

0.84

mJ

Ets

Total switching losses

1.45

mJ

1.

Energy losses include reverse recovery of the diode.

2.

Turn-off losses include also the tail of the collector current.

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