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STGB20N40LZ Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STGB20N40LZ Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 20 page DocID024251 Rev 5 3/20 STGB20N40LZ, STGD20N40LZ Electrical ratings 20 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK D2PAK VCES Collector-emitter voltage (vGE = 0) VCES(clamped) V VECS Emitter collector voltage (VGE = 0) 20 V IC Collector current (continuous) at TC = 100 °C 25 A ICP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 40 A VGE Gate-emitter voltage VGE(clamped) V PTOT Total dissipation at TC = 25 °C 125 150 W ESCIS Single pulse energy TC = 25 °C, L = 3 mH, VCC = 50 V 300 mJ ESCIS Single pulse energy TC =150 °C, L = 3 mH, VCC = 50 V 180 mJ ESD Human body model, R= 1.5 k Ω, C = 100 pF 8 kV Machine model, R = 0, C = 100 pF 600 V Charged device model 4 kV Tstg Storage temperature – 55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit DPAK D2PAK Rthj-case Thermal resistance junction-case 1.2 1 °C/W Rthj-amb Thermal resistance junction-ambient 100 62.5 °C/W |
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