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STGB15H60DF Scheda tecnica(PDF) 11 Page - STMicroelectronics |
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STGB15H60DF Scheda tecnica(HTML) 11 Page - STMicroelectronics |
11 / 23 page DocID025113 Rev 2 11/23 STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical characteristics 23 Figure 26. Switching times vs. gate resistance Figure 27. Reverse recovery current vs. diode current slope t 1 RG(Ω) (ns) 212 22 10 32 tf TJ= 175°C, VGE= 15V, IC= 15A, VCC= 400V 42 100 tdon tdoff tr GIPD041020131556FSR Irm 0 di/dt(A/μs) (A) 0 200 400 10 600 IF = 15A, Vr = 400V 800 15 =175°C =25°C 20 5 TJ TJ GIPD041020131622FSR Figure 28. Reverse recovery time vs. diode current slope Figure 29. Reverse recovery charge vs. diode current slope trr 0 di/dt(A/μs) (µs) 0 200 400 80 600 IF = 15A, Vr = 400V 800 120 =175°C =25°C 160 40 TJ TJ GIPD041020131630FSR Qrr 0 di/dt(A/μs) (nC) 0 200 400 400 600 IF = 15A, Vr = 400V 800 600 =175°C =25°C 200 TJ TJ GIPD041020131635FSR Figure 30. Reverse recovery energy vs. diode current slope Err 0 di/dt(A/μs) (µJ) 0 200 400 80 600 IF = 15A, Vr = 400V 800 120 =175°C =25°C 40 160 TJ TJ GIPD041020131638FSR |
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