STGB7H60DF datasheet(4/25 Pages) STMICROELECTRONICS

Il numero della parte	STGB7H60DF

Spiegazioni elettronici	Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB7H60DF, STGF7H60DF, STGP7H60DF

4/25

DocID027555 Rev 2

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0 V)

IC = 2 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 7 A

1.5

1.95

V

VGE = 15 V, IC = 7 A

TJ = 125 °C

1.6

VGE = 15 V, IC = 7 A

TJ = 175 °C

1.7

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.8

6.2

6.9

V

ICES

Collector cut-off current

(VGE = 0 V)

VCE = 600 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0 V)

VGE = ±20 V

250

nA

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

-1050

-

pF

Coes

Output capacitance

-

51

-

Cres

Reverse transfer

capacitance

-23

-

Qg

Total gate charge

VCC = 480 V, IC = 7 A,

VGE = 15 V

-46

-

nC

Qge

Gate-emitter charge

-

7

-

Qgc

Gate-collector charge

-

21

-

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