SI6925DQ datasheet(2/4 Pages) VISHAY

Il numero della parte	SI6925DQ

Spiegazioni elettronici	Dual N-Channel 2.5-V (G-S) MOSFET

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Si6925DQ

Vishay Siliconix

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2-2

Document Number: 70631

S-49455—Rev. A, 17-Dec-96

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 70_C

5

mA

On-State Drain Currentb

ID(on)

VDS w 5 V, VGS = 4.5 V

10

A

DiS

OS

R

i

b

VGS = 4.5 V, ID = 3.4 A

0.038

0.05

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 3.0 V, ID = 3.1 A

0.044

0.07

W

VGS = 2.5 V, ID = 2.7 A

0.048

0.08

Forward Transconductanceb

gfs

VDS = 10 V, ID = 3.4 A

18

S

Diode Forward Voltageb

VSD

IS = 1.25 A, VGS = 0 V

0.7

1.2

V

Dynamica

Total Gate Charge

Qg

V

6 V V

45 V I

34 A

7.5

15

C

Gate-Source Charge

Qgs

VDS = 6 V, VGS = 4.5 V, ID = 3.4 A

1.2

nC

Gate-Drain Charge

Qgd

1.8

Turn-On Delay Time

td(on)

V6 V R

6

W

10

20

Rise Time

tr

VDD = 6 V, RL = 6 W

I1 A V

4 5 V R

6

W

25

50

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

40

60

ns

Fall Time

tf

10

20

Source-Drain Reverse Recovery Time

trr

IF = 1.25 A, di/dt = 100 A/ms

50

90

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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