SI4832DY-T1 datasheet(3/5 Pages) VISHAY

Il numero della parte	SI4832DY-T1

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si4832DY

Vishay Siliconix

Document Number: 71774

S-31062—Rev. F, 26-May-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

5

10

15

20

25

VDS = 15 V

ID = 9 A

VGS = 10 V

ID = 9 A

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0

10

20

30

40

50

0

1234

5

0

300

600

900

1200

1500

1800

0

5

10

15

20

25

30

0

10

20

30

40

50

0

1234

5

0.00

0.02

0.04

0.06

0.08

0.10

0

10203040

50

VGS = 10 thru 5 V

TC = 125_C

-55

_C

Crss

Coss

Ciss

VGS = 10 V

VGS = 4.5 V

3 V

25

_C

4 V

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