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SI4832DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4832DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si4832DY Vishay Siliconix Document Number: 71774 S-31062—Rev. F, 26-May-03 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.018 @ VGS = 10 V 9 30 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G S Schottky Diode D Ordering Information: Si4832DY Si4832DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage (MOSFET) VDS 30 Reverse Voltage (Schottky) VDS 30 V Gate-Source Voltage (MOSFET) VGS "20 V Continuous Drain Current (TJ = 150_C) (MOSFET)a, b TA = 25_C ID 9 6.9 Continuous Drain Current (TJ = 150_C) (MOSFET)a, b TA = 70_C ID 7.5 5.6 Pulsed Drain Current (MOSFET) IDM 50 A Continuous Source Current (MOSFET Diode Conduction)a, b IS 2.1 1.2 A Average Foward Current (Schottky) IF 4.0 2.3 Pulsed Foward Current (Schottky) IFM 50 Maximum Power Dissipation (MOSFET)a b TA = 25_C 2.5 1.4 Maximum Power Dissipation (MOSFET)a b TA = 70_C PD 1.6 0.9 W Maximum Power Dissipation (Schottky)a, b TA = 25_C PD 2.0 1.2 W Maximum Power Dissipation (Schottky)a, b TA = 70_C 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum Unit M i J ti t A bi t (t 10 )a MOSFET 40 50 Maximum Junction-to-Ambient (t v 10 sec)a Schottky R 50 60 _C/W Maximum Junction to Ambient (t steady state)a MOSFET RthJA 70 90 _C/W Maximum Junction-to-Ambient (t = steady state)a Schottky 80 100 Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm |
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