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SI4539ADY-T1 Scheda tecnica(PDF) 6 Page - Vishay Siliconix |
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SI4539ADY-T1 Scheda tecnica(HTML) 6 Page - Vishay Siliconix |
6 / 7 page Si4539ADY Vishay Siliconix www.vishay.com 2-6 Document Number: 71131 S-03951—Rev. B, 26-May-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 04 8 12 16 20 VDS = 15 V ID = 4.9 A VGS = 10 V ID = 4.9 A Gate Charge Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 2468 10 ID = 4.9 A 30 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ = 25_C TJ = 150_C 0 30 50 10 20 Single Pulse Power Time (sec) 40 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ - Temperature (_C) 1 100 600 10 10-1 10-2 10-3 |
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