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STD18GKXX Scheda tecnica(PDF) 3 Page - Sirectifier Semiconductors |
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STD18GKXX Scheda tecnica(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page Thyristor-Diode Modules Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 10 100 1000 1 10 100 1000 mA IG s tgd Limit typ. TVJ = 25 C 100 101 102 103 104 0.1 1 10 IG VG mA 1: IGT, TVJ = 125 C 2: IGT, TVJ = 25 C 3: IGT, TVJ = -40 C V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125 C 3 4 2 1 5 6 Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time Fig. 1 Surge overload current I TSM: Crest value, t: duration Fig. 2 ˇi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 3 x STD/SDT18 STD18GKXX P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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