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SI4340DY Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI4340DY Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 9 page Si4340DY Vishay Siliconix New Product www.vishay.com 4 Document Number: 72376 S-31857—Rev. A, 15-Sep-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 2468 10 TJ = 150_C TJ = 25_C ID = 9.6A 50 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0 120 200 40 80 Single Pulse Power Time (sec) 160 -0.8 -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ - Temperature (_C) 110 0.1 0.001 0.01 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 Limited by rDS(on) TC = 25_C Single Pulse 10 ms 100 ms dc 10 s 1 s |
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