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STFW2N105K5 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STFW2N105K5
Spiegazioni elettronici  N-channel 1050 V, 6 廓 typ., 1.5 A Zener-protected SuperMESH??5 Power MOSFET in a TO-3PF package
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFW2N105K5 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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STFW2N105K5
Electrical characteristics
14
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
Turn-on delay time
V
DD
= 525 V, I
D
= 0.75 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see Figure 15)
-
14.5
-
ns
t
r
Rise time
-
8.5
-
ns
t
d(off)
Turn-off-delay time
-
35
-
ns
t
f
Fall time
-
38.5
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
I
SD
Source-drain current
-
1.5
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
6
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 1.5 A, V
GS
= 0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 1.5 A, di/dt = 100 A/μs
V
DD
= 60 V
(see Figure 17)
-
326
ns
Q
rr
Reverse recovery charge
-
1.19
μC
I
RRM
Reverse recovery current
-
7.3
A
t
rr
Reverse recovery time
I
SD
= 1.5 A, di/dt = 100 A/μs
V
DD
= 60 V T
J
= 150 °C
(see Figure 17)
-
525
ns
Q
rr
Reverse recovery charge
-
1.83
μC
I
RRM
Reverse recovery current
-
7
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1mA, I
D
=0
30
-
-
V


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