SI2311DS datasheet(2/4 Pages) VISHAY

Il numero della parte	SI2311DS

Spiegazioni elettronici	P-Channel 1.8-V (G-S) MOSFET

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Si2311DS

Vishay Siliconix

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Document Number: 71813

S-05831—Rev. A, 04-Mar-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–8

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

–0.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = –6.4 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V, TJ = 55_C

–10

mA

VDS v –5 V, VGS = –4.5 V

–6

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –2.5 V

–3

A

VGS = –4.5 V, ID = –3.5 A

0.036

0.045

Drain-Source On-Resistancea

rDS(on)

VGS = –2.5 V, ID = –3 A

0.058

0.072

W

VGS = –1.8 V, ID = –0.7 A

0.096

0.120

Forward Transconductancea

gfs

VDS = –5 V, ID = –3.5 A

9.0

S

Diode Forward Voltage

VSD

IS = –0.8 A, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

8.5

12

Gate-Source Charge

Qgs

VDS = –4 V, VGS = –4.5 V

ID ^ –3.5 A

1.5

nC

Gate-Drain Charge

Qgd

ID ^ –3.5 A

2.1

Input Capacitance

Ciss

970

Output Capacitance

Coss

VDS = –4 V, VGS = 0, f = 1 MHz

485

pF

Reverse Transfer Capacitance

Crss

160

Switchingb

td(on)

18

25

Turn-On Time

tr

VDD = –4 V, RL = 4 W

^

45

65

td(off)

ID ^ –1.0 A, VGEN = –4.5 V

RG = 6 W

40

60

ns

Turn-Off Time

tf

45

65

Notes

a.

For DESIGN AID ONLY, not subject to production testing.

b.

Pulse test: PW

v300 ms duty cycle v2%.

c.

Switching time is essentially independent of operating temperature.

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