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STF45N10F7 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STF45N10F7
Spiegazioni elettronici  Ultra low on-resistance
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
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DocID024005 Rev 3
3/13
STF45N10F7
Electrical ratings
13
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
100
V
V
GS
Gate-source voltage
20
V
I
D
Drain current (continuous) at T
C
= 25 °C
30
A
I
D
Drain current (continuous) at T
C
= 100 °C
21.4
A
I
DM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
120
A
P
TOT
Total dissipation at T
c
= 25 °C
25
W
V
ISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s;TC=25 °C)
2500
V
T
J
Operating junction temperature
-55 to 175
°C
T
stg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
6
°C/W
R
thj-amb
Thermal resistance junction-ambient
62.5
°C/W


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