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STF45N10F7 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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3 / 13 page DocID024005 Rev 3 3/13 STF45N10F7 Electrical ratings 13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 100 V V GS Gate-source voltage 20 V I D Drain current (continuous) at T C = 25 °C 30 A I D Drain current (continuous) at T C = 100 °C 21.4 A I DM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 120 A P TOT Total dissipation at T c = 25 °C 25 W V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V T J Operating junction temperature -55 to 175 °C T stg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 6 °C/W R thj-amb Thermal resistance junction-ambient 62.5 °C/W |
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