STP34NM60N datasheet(3/17 Pages) STMICROELECTRONICS

Il numero della parte	STP34NM60N

Spiegazioni elettronici	Low gate input resistance

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DocID17740 Rev 9

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STB34NM60N, STP34NM60N

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

31.5

A

ID

Drain current (continuous) at TC = 100 °C

20

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

126

A

PTOT

Total dissipation at TC = 25 °C

250

W

IAR

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax )

7A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

345

mJ

dv/dt (2)

2.

ISD ≤ 31.5 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

3.

VDS ≤ 480 V

MOSFET dv/dt ruggedness

50

V/ns

Tstg

Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

Rthj-pcb

(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-pcb max

30

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