STD6N52K3 datasheet(3/22 Pages) STMICROELECTRONICS

Il numero della parte	STD6N52K3

Spiegazioni elettronici	Extremely high dv/dt capability

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STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3

Electrical ratings

Doc ID 14994 Rev 2

3/22

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 D²PAK DPAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

525

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

5

5 (1)

1.

Limited by package

A

ID

Drain current (continuous) at TC = 100 °C

3

3 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

20

20 (1)

A

PTOT

Total dissipation at TC = 25 °C

70

25

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

2.5

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

110

mJ

dv/dt (3)

3.

ISD ≤ 5 A, di/dt = 400 V, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

12

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 D²PAK DPAK TO-220FP

Rthj-case Thermal resistance junction-case max

1.79

5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

30

50

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

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