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STF23N80K5 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STF23N80K5
Spiegazioni elettronici  N-channel 800 V, 0.23typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF23N80K5 Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF23N80K5
4/13
DocID028292 Rev 1
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V,
Tcase = 125 °C
50
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 8 A
0.23
0.28
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
1000
-
pF
Coss
Output capacitance
-
65
-
Crss
Reverse transfer
capacitance
-
1.5
-
CO(tr)(1)
Equivalent output
capacitance
VDS = 0 to 640 V, VGS = 0 V
-
165
-
pF
CO(er)(2)
Equivalent output
capacitance
VDS = 0 to 640 V, VGS = 0 V
-
59
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.7
-
Ω
Qg
Total gate charge
VDD = 640 V, ID = 16 A,
VGS = 10 V (see Figure 14:
"Test circuit for gate charge
behavior")
-
33
-
nC
Qgs
Gate-source charge
-
6
-
Qgd
Gate-drain charge
-
25
-
Notes:
(1) Time related is defined as a constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0 to 80% VDSS.
(2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as COSS when
VDS increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 8 A
RG = 4.7
Ω, VGS = 10 V (see
Figure 13: "Test circuit for
resistive load switching times"
and Figure 18: "Switching time
waveform")
-
14
-
ns
tr
Rise time
-
9
-
td(off)
Turn-off delay time
-
48
-
tf
Fall time
-
9
-


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