STP10N105K5 datasheet(7/18 Pages) STMICROELECTRONICS

Il numero della parte	STP10N105K5

Spiegazioni elettronici	Ultra low gate charge

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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7 / 18 page

STF10N105K5, STP10N105K5, STW10N105K5

Electrical characteristics

DocID026932 Rev 2

7/18

Figure 8: Output characteristics

Figure 9: Transfer characteristics

Figure 10: Gate charge vs gate-source

voltage

Figure 11: Static drain-source on-resistance

Figure 12: Capacitance variation

Figure 13: Normalized gate threshold voltage vs

temperature

ID

4

0

5

VDS(V)

10

(A)

15

6V

VGS=9,10, 11V

6

12

20

7V

8V

2

8

10

14

GIPG160920141123LM

ID

10

0

5

7

VGS(V)

9

(A)

6

8

10

2

VDS=20V

4

6

8

12

14

GIPG160920141136LM

VGS

6

4

2

0

10

Qg(nC)

(V)

8

15

10

VDD= 840 V

ID= 6 A

12

100

0

200

500

5

VDS

(V)

300

600

400

20

700

800

GIPG160920141152LM

RDS(on)

1.10

1.00

0.90

0

4

ID(A)

(

Ω)

2

6

1.20

VGS=10V

8

10

1.30

1.40

1.50

14

12

1.60

0.80

GIPG160920141211LM

C

1000

100

10

1

0.1

10

VDS(V)

(pF)

1

100

Ciss

Coss

Crss

1000

GIPG160920141238LM

VGS(th)

0.6

0.4

0.2

0

-50

0

TJ(°C)

(norm)

-

1.2

100

50

100

ID=100µ A

0.8

1

150

GIPG160920141251LM

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