Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

STDLED656 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STDLED656
Spiegazioni elettronici  Gate charge minimized
Download  22 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDLED656 Scheda tecnica(HTML) 5 Page - STMicroelectronics

  STDLED656 Datasheet HTML 1Page - STMicroelectronics STDLED656 Datasheet HTML 2Page - STMicroelectronics STDLED656 Datasheet HTML 3Page - STMicroelectronics STDLED656 Datasheet HTML 4Page - STMicroelectronics STDLED656 Datasheet HTML 5Page - STMicroelectronics STDLED656 Datasheet HTML 6Page - STMicroelectronics STDLED656 Datasheet HTML 7Page - STMicroelectronics STDLED656 Datasheet HTML 8Page - STMicroelectronics STDLED656 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 22 page
background image
DocID024429 Rev 1
5/22
STDLED656, STFILED656, STPLED656, STULED656
Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
5.4
21.6
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 5.4 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 21)
-
285
5100
14
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 21)
-
330
2500
15.5
ns
nC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
30
-
-
V
Obsolete
Product(s)
- Obsolete
Product(s)


Codice articolo simile - STDLED656

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
STDLED602 STMICROELECTRONICS-STDLED602 Datasheet
1Mb / 19P
   N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages
March 2013
STDLED623 STMICROELECTRONICS-STDLED623 Datasheet
1Mb / 18P
   Very low intrinsic capacitance
September 2013 Rev 1
STDLED624 STMICROELECTRONICS-STDLED624 Datasheet
1Mb / 22P
   N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages
March 2013
STDLED625 STMICROELECTRONICS-STDLED625 Datasheet
1Mb / 18P
   Gate charge minimized
August 2013 Rev 1
STDLED625H STMICROELECTRONICS-STDLED625H Datasheet
1Mb / 17P
   Gate charge minimized
March 2013 Rev 1
More results

Descrizione simile - STDLED656

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
STP3NK50Z STMICROELECTRONICS-STP3NK50Z Datasheet
626Kb / 14P
   Gate charge minimized
August 2013 Rev 1
STW9NK95Z STMICROELECTRONICS-STW9NK95Z Datasheet
312Kb / 12P
   Gate charge minimized
July 2008 Rev 2
STDLED625H STMICROELECTRONICS-STDLED625H Datasheet
1Mb / 17P
   Gate charge minimized
March 2013 Rev 1
STF16N50U STMICROELECTRONICS-STF16N50U Datasheet
691Kb / 12P
   Gate charge minimized
September 2010 Rev 1
STU3N45K3 STMICROELECTRONICS-STU3N45K3 Datasheet
838Kb / 14P
   Gate charge minimized
June 2013 Rev 3
STQ1HN60K3-AP STMICROELECTRONICS-STQ1HN60K3-AP Datasheet
1Mb / 14P
   Gate charge minimized
April 2013 Rev 1
STD3N40K3 STMICROELECTRONICS-STD3N40K3 Datasheet
990Kb / 16P
   Gate charge minimized
July 2012 Rev 1
STDLED625 STMICROELECTRONICS-STDLED625 Datasheet
1Mb / 18P
   Gate charge minimized
August 2013 Rev 1
STF11N65K3 STMICROELECTRONICS-STF11N65K3 Datasheet
815Kb / 13P
   Gate charge minimized
October 2011 Rev 2
logo
Ruichips Semiconductor ...
RU4H10R RUICHIPS-RU4H10R Datasheet
300Kb / 9P
   N-Channel Advanced Power MOSFET Gate charge minimized
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com