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STD110N8F6 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STD110N8F6 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID027274 Rev 1 5/16 STD110N8F6 Electrical characteristics 16 Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15) -30 ns Qrr Reverse recovery charge - 34 nC IRRM Reverse recovery current - 2.3 A |
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