STD16N50M2 datasheet(4/21 Pages) STMICROELECTRONICS

Il numero della parte	STD16N50M2

Spiegazioni elettronici	Extremely low gate charge

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Electrical characteristics

STD16N50M2, STF16N50M2, STP16N50M2

4/21

DocID026641 Rev 5

2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

500

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 500 V

1

µA

VGS = 0 V, VDS = 500 V,

TC = 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 6.5 A

0.24

0.28

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

-

710

-

pF

Coss

Output capacitance

-

44

-

pF

Crss

Reverse transfer

capacitance

-

1.35

-

pF

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 V to 400 V, VGS = 0 V

-

192

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID= 0 A

-

5.2

-

Ω

Qg

Total gate charge

VDD = 400 V, ID = 13 A,

VGS = 0 to 10 V

(see Figure 19: "Test circuit for

gate charge behavior")

-

19.5

-

nC

Qgs

Gate-source charge

-

4

-

nC

Qgd

Gate-drain charge

-

8

-

nC

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 250 V, ID = 6.5 A

RG = 4.7

Ω, VGS = 10 V

(see Figure 18: "Test circuit for

resistive load switching times"

and Figure 23: "Switching time

waveform")

-

9.6

-

ns

tr

Rise time

-

7.6

-

ns

td(off)

Turn-off-delay time

-

32

-

ns

tf

Fall time

-

10

-

ns

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