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STF10N95K5 Scheda tecnica(PDF) 8 Page - STMicroelectronics |
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STF10N95K5 Scheda tecnica(HTML) 8 Page - STMicroelectronics |
8 / 22 page Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 8/22 DocID024850 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Normalized VDS vs temperature Figure 17. Source-drain diode forward characteristics VGS(th) 0.6 0.4 0.2 0 -100 0 TJ(°C) (norm) -50 0.8 50 150 ID=100µA 100 1 1.2 AM16142v1 RDS(on) 2 1 0 TJ(°C) (norm) 0.5 1.5 2.5 ID=4A VGS=10V -100 0 -50 50 150 100 AM16143v1 VDS TJ(°C) (norm) 0.85 0.9 0.95 1 1.05 1.1 ID=1mA -100 0 -50 50 150 100 AM16145v1 VSD 2 4 ISD(A) (V) 3 5 6 0.5 0.6 0.7 0.8 TJ=-50°C TJ=150°C TJ=25°C 0.9 7 AM16144v1 Figure 18. Maximum avalanche energy vs starting TJ EAS 0 50 TJ(°C) (mJ) 25 125 75 100 0 20 40 60 80 100 ID=2.5 A VDD=50 V 120 AM16146v1 |
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