STPSC30H12C datasheet(4/9 Pages) STMICROELECTRONICS

Il numero della parte	STPSC30H12C

Spiegazioni elettronici	Robust high voltage periphery

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

STPSC30H12C

4/9

DocID030339 Rev 1

1.1

Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values, per diode)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 3: Peak forward current versus case

temperature (per diode)

Figure 4: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 6: Non-repetitive peak surge forward

current versus pulse duration

(sinusoidal waveform, per diode)

IF(A)

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF(V)

T

a = 150 °C

Pulse test : t

p = 500 µs

Ta = 25 °C

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

100

200

300

400

500

600

700

800

900 1000 1100 1200

IR(µA)

VR (V)

T

j = 25 °C

T

j = 150 °C

0

20

40

60

80

100

120

140

0

25

50

75

100

125

150

175

Tc (°C)

T

δ = tp/T

tp

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

IM (A)

0

200

400

600

800

1000

1200

0.1

1.0

10.0

100.0

1000.0

10000.0

V

R (V)

F = 1 MHz

V

OSC = 30 mVRMS

T

j = 25 °C

Cj(pF)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Single pulse

Zth(j-c)/Rth(j-c)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

tp(s)

Ta= 25 °C

Ta= 150 °C

IFSM (A)

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