STPSC20H12C datasheet(1/10 Pages) STMICROELECTRONICS

Il numero della parte	STPSC20H12C

Spiegazioni elettronici	No or negligible reverse recovery

Download	10 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

1 / 10 page

February 2017

DocID030344 Rev 1

1/10

This is information on a product in full production.

www.st.com

STPSC20H12C

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery



Operating Tj from -40 °C to 175 °C



ECOPACK®2 compliant

Description

The SiC diode, available in TO-247 LL, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low VF Schottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

2 x 10 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

K

A1

A2

TO-247 LL

K

A2

A1

Codice articolo simile - STPSC20H12C

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STPSC20H12CWY	257Kb / 10P	20 A 1200 V power Schottky silicon carbide diode Rev 2 - February 2021

More results

Descrizione simile - STPSC20H12C

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Littelfuse	LSIC2SD120C10	729Kb / 6P	This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
	LSIC2SD120A05	872Kb / 6P	This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
	LSIC2SD120A10	879Kb / 6P	This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
	LSIC2SD120C05	716Kb / 6P	This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
STMicroelectronics	BAT30F4	175Kb / 10P	Negligible switching losses February 2016 Rev 5
STMicroelectronics	BYW80F	361Kb / 7P	Negligible switching losses January 2002 - Ed: 3G
Sangdest Microelectroni...	BAT54	221Kb / 5P	Negligible switching losses
STMicroelectronics	STTH208-Y	221Kb / 7P	Negligible switching losses February 2014 Rev 1
STMicroelectronics	STTH110-Y	222Kb / 7P	Negligible switching losses February 2014 Rev 1
Infineon Technologies A...	SDB20S30	1Mb / 8P	Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery Rev. 1.2 2007-03-27

More results

STPSC20H12C Scheda tecnica(PDF) 1 Page - STMicroelectronics

STPSC20H12C Scheda tecnica(HTML) 1 Page - STMicroelectronics

Codice articolo simile - STPSC20H12C

Descrizione simile - STPSC20H12C

Html Pages

1 2 3 4 5 6 7 8 9 10

Scheda tecnica Scarica

Link URL