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STFI15N95K5 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STFI15N95K5
Spiegazioni elettronici  N-channel 950 V, 0.41typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI15N95K5 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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STFI15N95K5
Electrical characteristics
DocID029528 Rev 1
5/13
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM
Source-drain current
(pulsed)
-
48
A
VSD(1)
Forward on voltage
ISD = 12 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 17: "Test circuit for
inductive load switching and
diode recovery times")
-
444
ns
Qrr
Reverse recovery charge
-
7
µC
IRRM
Reverse recovery current
-
32
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test circuit for
inductive load switching and
diode recovery times")
-
630
ns
Qrr
Reverse recovery charge
-
9.2
µC
IRRM
Reverse recovery current
-
29
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V (BR)GSO
Gate-source breakdown voltage
IGS= ± 1 mA, ID= 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.


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