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BC856BT Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC856BT Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification PNP General Purpose Transistor BC856T/BC857T H031 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT IE=0,VCB=-30V -15 nA ICBO Collector cut-off current IE=0,VCB=-30V,Tj=150℃ -5 uA IEBO Emitter cut-off current IC=0,VEB=-5V -100 nA hFE DC current gain BC856AT; BC856BT BC857AT; BC857BT BC857CT VCE=-5V,IC=-2mA 125 220 420 - - - 250 475 800 IC=-10mA,IB=-0.5mA -200 mV VCE(sat) collector-emitter saturation voltage IC=-100mA,IB=-5mA(note1) -400 mV IC=-2mA, VCE=-5V -580 -700 mV VBE Base- emitter voltage IC=-10mA, VCE=-5V -770 mV CC Collector capacitance IE=0,VCB=-10V,f=1MHz 2.5 pF Ce Emitter capacitance IC=0,VEB=-0.5V,f=1MHz 10 pF F Noise figure IC=200uA,VCE=-5V, RS=2kΩ,f=1kHZ,B=200Hz 10 dB fT transition frequency IC=-10mA,VCE =-5V, f=100MHz 100 MHz Note 1.Pulse test:tp≤300uS;δ≤0.02 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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