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MTB9D0P03H8-0-T6-G Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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MTB9D0P03H8-0-T6-G Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 11 page CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 4/11 MTB9D0P03H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 20 40 60 80 100 120 140 160 180 200 01 2 345 -VDS, Drain-Source Voltage(V) -10V VGS=-3V -3.5V -4V -6V -5V -4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 0.01 0.1 1 10 100 -ID, Drain Current(A) VGS=-4.5V VGS=-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 024 68 -IS, Source Drain Current(A) 10 VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 5 10 15 20 25 30 35 40 45 50 02468 10 Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=-10V, ID=-20A RDS(ON)@Tj=25°C : 7.3mΩ typ. -VGS, Gate-Source Voltage(V) ID=-20A |
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