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MTB9D0P03H8 Scheda tecnica(PDF) 2 Page - Cystech Electonics Corp.

Il numero della parte MTB9D0P03H8
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB9D0P03H8 Scheda tecnica(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 2/11
MTB9D0P03H8
CYStek Product Specification
Absolute Maximum Ratings (Ta=25
°C)
Parameter
Symbol
10s
Steady State
Unit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TC=25
°C, VGS=-10V (Note1)
-59
Continuous Drain Current @ TC=100
°C, VGS=-10V (Note1)
ID
-37.3
Continuous Drain Current @ TA=25
°C, VGS=-10V (Note2)
-19.5
-11.6
Continuous Drain Current @ TA=70
°C, VGS=-10V (Note2)
IDSM
-15.6
-9.3
Pulsed Drain Current
(Note3)
IDM
-210
Avalanche Current@L=0.1mH
(Note4)
IAS
-34
A
Avalanche Energy @ L=1mH, ID=-16A, VDD=-15V (Note4)
EAS
128
mJ
TC=25℃
(Note1)
60
TC=100℃
(Note1)
PD
24
TA=25°C
(Note2)
6.5
2.3
Total Power Dissipation
TA=70°C
(Note2)
PDSM
4.5
1.6
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Typical Maximum
Unit
Thermal Resistance, Junction-to-case
Rth,j-c
2.2
2.5
t≤10s
18
23
Thermal Resistance, Junction-to-ambient
(Note2)
Steady State
Rth,j-a
50
65
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of
L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V.
Characteristics (TC=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-30
-
-
VGS=0V, ID=-250μA
VGS(th)
-1
-
-2.5
V
VDS = VGS, ID=-250μA
GFS *1
-
14.7
-
S
VDS =-10V, ID=-5A
IGSS
-
-
±
100
nA
VGS=±20V, VDS=0V
-
-
-1
VDS =-24V, VGS =0V
IDSS
-
-
-10
μA
VDS =-24V, VGS =0, Tj=70
°C
-
7.3
10
VGS =-10V, ID=-20A
RDS(ON) *1
-
12
17
VGS =-4.5V, ID=-12A


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