SI7409ADN datasheet(4/6 Pages) VISHAY

Il numero della parte	SI7409ADN

Spiegazioni elettronici	P-Channel 30-V (D-S) MOSFET

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Document Number: 73246

S-83051-Rev. C, 29-Dec-08

Vishay Siliconix

Si7409ADN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Threshold Voltage

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power, Junction-to-Ambient

0.01

0

1

40

50

10

600

Time (s)

30

20

0.1

10

100

TA = 25 °C

Single Pulse

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

TA = 25 °C

Single Pulse

0.1

IDM Limited

ID(on)

Limited

BVDSS Limited

10 s

DC, 100 s

1 s

100 ms

10 ms

1 ms

100 µs, 10 µs

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS (on) is specified

Limited by RDS(on)*

Normalized Thermal Transient Impedance, Junction-to-Ambient

10 -3

10 -2

1

10

600

10 -1

10 -4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 65 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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