SI5479DU datasheet(4/7 Pages) VISHAY

Il numero della parte	SI5479DU

Spiegazioni elettronici	P-Channel 12-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 73368

S-81448-Rev. B, 23-Jun-08

Vishay Siliconix

Si5479DU

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.4

1

10

20

0.0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

1.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

012345

ID = 6.9 A

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

0

30

40

10

20

Time (s)

0

6

1

0.1

0.01

0.001

10

100

Safe Operating Area, Junction-to-Ambient

100

1

0

1

.

0

0.01

10

0.1

1 ms

10 ms

100 ms

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1 s

10 s

Limited by RDS(on)*

10

TA = 25 °C

Single Pulse

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