Motore di ricerca datesheet componenti elettronici |
|
SI5479DU Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
|
SI5479DU Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 Vishay Siliconix Si5479DU TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.4 1 10 20 0.0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 012345 ID = 6.9 A VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0 30 40 10 20 Time (s) 0 0 6 1 0.1 0.01 0.001 10 100 Safe Operating Area, Junction-to-Ambient 100 1 0 0 1 1 1 . 0 0.01 10 0.1 1 ms 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 s 10 s Limited by RDS(on)* 10 TA = 25 °C Single Pulse |
Codice articolo simile - SI5479DU |
|
Descrizione simile - SI5479DU |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |