SI4688DY datasheet(1/6 Pages) VISHAY

Il numero della parte	SI4688DY

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4688DY

New Product

Document Number: 69996

S09-0394-Rev. B, 09-Mar-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Notebook PC

- Core

- System Power

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

30

0.011 at VGS = 10 V

12

0.0145 at VGS = 4.5 V

9.8

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4688DY-T1-E3 (Lead (Pb)-free)

Si4688DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

D

S

D

S

D

S

D

G

S

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

12

8.9

A

TA = 70 °C

9.5

7.1

Pulsed Drain Current

IDM

40

Continuous Source Current (Diode Conduction)a

IS

2.3

1.3

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Avalanche Energy

EAS

20

mJ

Maximum Power Dissipationa

TA = 25 °C

PD

2.5

1.4

W

TA = 70 °C

1.6

0.9

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

43

50

°C/W

Steady State

73

90

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

19

25

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