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2SA1577 Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1577 Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification PNP Silicon Epitaxial Planar Transistor 2SA1577 F030 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 - - V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 - - V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V,IE=0 - - -1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 - - -1 μA DC current gain hFE VCE=-3V,IC=-100mA 82 - 390 Collector-emitter saturation voltage VCE(sat) IC=-300mA, IB=-30mA - - -0.6 V Base-emitter saturation voltage VBE(sat) IC=-300mA, IB=-300mA - - -1.1 V Transition frequency fT VCE=-5V, IE= 20mA f=100MHz - 200 - MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz - 7 - pF CLASSIFICANTION OF hFE Rank P Q R Range 82-120 120-270 180-390 marking HP HQ HR |
Codice articolo simile - 2SA1577 |
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