2SA1577 datasheet(2/4 Pages) BILIN

Il numero della parte	2SA1577

Spiegazioni elettronici	PNP Silicon Epitaxial Planar Transistor

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Produttore elettronici	BILIN [Galaxy Semi-Conductor Holdings Limited]

Homepage	http://www.galaxycn.com

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Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1577

F030

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-40

-

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-32

-

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

-

V

Collector cut-off current

ICBO

VCB=-20V,IE=0

-

-1

μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-

-1

μA

DC current gain

hFE

VCE=-3V,IC=-100mA

82

-

390

Collector-emitter saturation voltage

VCE(sat)

IC=-300mA, IB=-30mA

-

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-300mA, IB=-300mA

-

-1.1

V

Transition frequency

fT

VCE=-5V, IE= 20mA

f=100MHz

-

200

-

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

-

7

-

pF

CLASSIFICANTION OF hFE

Rank

P

Q

R

Range

82-120

120-270

180-390

marking

HP

HQ

HR

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