Motore di ricerca datesheet componenti elettronici |
|
BC818-40W Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
|
BC818-40W Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification NPN general purpose transistor BC817W/BC818W F076 www.gmicroelec.com Rev.B 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC817W BC818W V(BR)CBO IC=10uA,IB=0 50 30 V Collector-emitter breakdown voltage BC817W BC818W V(BR)CEO IC=10mA,IB=0 45 25 V Emitter-base breakdown voltage BC817W BC818W V(BR)EBO IE=10uA,IC=0 5 V Collector cut-off current ICBO VCB=25V,IE=0 VCB=25V,IE=0,Tj=150℃ 100 50 nA μA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=1V,IC=100mA 16W 25W 40W 100 160 250 250 400 600 VCE=1V,IC=300mA 16W 25W 40W 60 100 170 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V Transition frequency fT VCE=5V,IC=50mA, f=100MHz 170 MHz Collector-base capacitance CCb VCB=10V,IE=0,f=1MHz 6 pF |
Codice articolo simile - BC818-40W |
|
Descrizione simile - BC818-40W |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |