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BCX54-16 Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCX54-16 Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification NPN Silicon AF Transistors BCX54/BCX55/BCX56 E033 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA IB=0 BCX54 BCX55 BCX56 45 60 100 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 BCX54 BCX55 BCX56 45 60 80 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 5 V VCB=30V IE=0 100 nA Collector cut-off current ICBO VCB=30V IE=0,TA=150℃ 20 μA VCE=2V IC=5mA 25 VCE=2V IC=150mA BCX54…56 40 250 VCE=2V IC=150mA -10 -16 63 100 160 250 DC current gain hFE VCE=2V IC=500mA 25 Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA 0.5 V Base-emitter voltage VBE IC=500mA ,VCE=2V 1 V Transition frequency fT VCE=10V, IC=50mA, f=20MHz 100 MHz |
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