BCX51-10 datasheet(2/5 Pages) BILIN

Il numero della parte	BCX51-10

Spiegazioni elettronici	PNP Medium power transistors

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Produttore elettronici	BILIN [Galaxy Semi-Conductor Holdings Limited]

Homepage	http://www.galaxycn.com

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Production specification

PNP Medium power transistors

BCX51/BCX52/BCX53

E020

www.gmicroelec.com

Rev.A

2

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA IE=0 BCX51

BCX52

BCX53

-45

-60

-100

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-10mA IB=0 BCX51

BCX52

BCX53

-45

-60

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA IC=0

-5

μV

Collector cut-off current

ICBO

VCB=-30V IE=0

-0.1

μA

DC current gain

hFE

VCE=-2V IC=-5mA

25

VCE=-2V IC=-150mA

BCX51…53

40

250

VCE=-2V IC=-150mA -10

-16

63

100

160

250

VCE=-2V IC=-500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA IB=-50mA

-0.5

V

Base-emitter voltage

VBE

IC=-500mA ,VCE=-2V

-1

V

Transition frequency

fT

VCE=-10 IC=-50mA,

f=20MH

125

MHz

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