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BCX51-10 Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCX51-10 Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification PNP Medium power transistors BCX51/BCX52/BCX53 E020 www.gmicroelec.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA IE=0 BCX51 BCX52 BCX53 -45 -60 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=0 BCX51 BCX52 BCX53 -45 -60 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA IC=0 -5 μV Collector cut-off current ICBO VCB=-30V IE=0 -0.1 μA DC current gain hFE VCE=-2V IC=-5mA 25 VCE=-2V IC=-150mA BCX51…53 40 250 VCE=-2V IC=-150mA -10 -16 63 100 160 250 VCE=-2V IC=-500mA 25 Collector-emitter saturation voltage VCE(sat) IC=-500mA IB=-50mA -0.5 V Base-emitter voltage VBE IC=-500mA ,VCE=-2V -1 V Transition frequency fT VCE=-10 IC=-50mA, f=20MH 125 MHz |
Codice articolo simile - BCX51-10 |
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Descrizione simile - BCX51-10 |
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