SI5853CDC datasheet(6/10 Pages) VISHAY

Il numero della parte	SI5853CDC

Spiegazioni elettronici	P-Channel 20 V (D-S) MOSFET with Schottky Diode

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Document Number: 69774

S10-0547-Rev. B, 08-Mar-10

Vishay Siliconix

Si5853CDC

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1

2

3

4

5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power Derating

0

1

2

3

4

25

50

75

100

125

150

TC - Case Temperature (°C)

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