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SI8461DB Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI8461DB Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 8 page Si8461DB www.vishay.com Vishay Siliconix S15-1510-Rev. C, 29-Jun-15 4 Document Number: 65001 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 150 °C TJ = 25 °C VSD - Source-to-Drain Voltage (V) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) 0.00 0.04 0.08 0.12 0.16 0.20 01 2 3 45 TJ = 25 °C ID =1A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs Limited by RDS(on)* BVDSS Limited 1ms 10 ms 100 ms, 1 s 10 s, DC VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified |
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