2N3810 datasheet(1/2 Pages) MICROSEMI

Il numero della parte	2N3810

Spiegazioni elettronici	PNP SILICON DUAL TRANSISTOR

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Produttore elettronici	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500/336

Devices

Qualified

Level

2N3810

2N3810L

2N3810U

2N3811

2N3811L

2N3811U

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

50

mAdc

One

Section

1

Both

Sections

2

Total Power Dissipation

@ TA = +25

0C

PT

0.5

0.6

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

1) Derate linearly 2.86 mW/

0C for TA > +250C

2) Derate linearly 3.43 mW/

0C for TA > +250C

TO-78*

*See appendix A

for package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

IC = 10 µAdc

V(BR)CBO

60

Vdc

Collector-Emitter Breakdown Current

IC = 10 mAdc

V(BR)CEO

60

Vdc

Emitter-Base Breakdown Voltage

IE = 10 µAdc

V(BR)EBO

5.0

Vdc

Collector-Base Cutoff Current

VCB = 50 Vdc

ICBO

10

ηAdc

Emitter-Base Cutoff Current

VEB = 4.0 Vdc

IEBO

10

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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