SI7726DN datasheet(4/14 Pages) VISHAY

Il numero della parte	SI7726DN

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 68600

S-81737-Rev. B, 04-Aug-08

Vishay Siliconix

Si7726DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

12

24

36

48

60

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 4 V

VGS = 3 V

0.005

0.007

0.009

0.011

0.013

0.015

0

12243648

60

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0

6

12

18

24

30

ID

Qg - Total Gate Charge (nC)

= 10 A

VDS = 15 V

VDS = 10 V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

012345

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

T = - 55 °C

C

Crss

0

440

880

1320

1760

2200

06

12

18

24

30

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.3

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V

ID = 10 A

VGS = 4.5 V

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