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SI7315DN Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI7315DN Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 62895 S13-1816-Rev. A, 12-Aug-13 Vishay Siliconix Si7315DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 2.1 2.4 2.7 3 3.3 3.6 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.2 0.4 0.6 0.8 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 2.4A 0 30 50 10 20 Time (s) 40 10 1 0.1 100 0.01 Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T A = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10s, 1 s DC, I DM limited |
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