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SI4646DY Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI4646DY Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 68762 S09-0868-Rev. B, 18-May-09 Vishay Siliconix Si4646DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID= 1 mA 1.2 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.035 0.2 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 3.5 35 On -State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0092 0.0115 Ω VGS = 4.5 V, ID = 7 A 0.0115 0.0145 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 38 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1790 pF Output Capacitance Coss 310 Reverse Transfer Capacitance Crss 130 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 30 45 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 13.7 21 Gate-Source Charge Qgs 5 Gate-Drain Charge Qgd 4 Gate Resistance Rg f = 1 MHz 0.3 1.2 2.4 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 23 45 ns Rise Time tr 13 25 Turn-Off Delay Time td(off) 29 55 Fall Time tf 12 24 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 11 22 Rise Time tr 10 20 Turn-Off Delay Time td(off) 22 45 Fall Time tf 816 Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.6 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2 A 0.53 0.7 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 17 30 ns Body Diode Reverse Recovery Charge Qrr 5.5 10 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 9 |
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