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SI2356DS Scheda tecnica(PDF) 5 Page - Vishay Siliconix

Il numero della parte SI2356DS
Spiegazioni elettronici  N-Channel 40 V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2356DS Scheda tecnica(HTML) 5 Page - Vishay Siliconix

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Vishay Siliconix
Si2356DS
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1.2
2.4
3.6
4.8
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Junction-to-Foot
0
0.5
1
1.5
2
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Junction-to-Ambient
0
0.18
0.36
0.54
0.72
0.9
0
25
50
75
100
125
150
T
A - Ambient Temperature (°C)


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