IRF820S, SiHF820S, IRF820L, SiHF820L

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Vishay Siliconix

S15-1659-Rev. D, 20-Jul-15

2

Document Number: 91060

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-62

°C/W

Maximum Junction-to-Ambient



-40

Maximum Junction-to-Case (Drain)

-2.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

V

-

0.59

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

μA

-

-

250

Drain-Source On-State Resistance

--

3.0



Forward Transconductance

1.5

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

360

-

pF

Output Capacitance

-92

-

Reverse Transfer Capacitance

-37

-

Total Gate Charge

--

24

nC

Gate-Source Charge

--

3.3

Gate-Drain Charge

--

13

Turn-On Delay Time

-8.0

-

ns

Rise Time

-8.6

-

Turn-Off Delay Time

-33

-

Fall Time

-16

-

Internal Drain Inductance

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol



showing the



integral reverse



p - n junction diode

--

2.5

A

--

8.0

Body Diode Voltage

--

1.6

V

Body Diode Reverse Recovery Time

-

260

520

ns

Body Diode Reverse Recovery Charge

-0.70

1.4

μC

Forward Turn-On Time

D

S

G

S

D

G