IRF9Z10 datasheet(3/8 Pages) VISHAY

Il numero della parte	IRF9Z10

Spiegazioni elettronici	Power MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 90118

www.vishay.com

S11-0511-Rev. B, 21-Mar-11

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z10, SiHF9Z10

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 ° C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

90118_01

20 µs Pulse Width

T

C = 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

100

101

100

10-1

Bottom

Top

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10-1

101

100

10-1

100

101

- VDS, Drain-to-Source Voltage (V)

Bottom

Top

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

T

C = 175 °C

90118_02

- 4.5 V

10-1

20 µs Pulse Width

V

DS = - 25 V

101

100

10-1

- VGS, Gate-to-Source Voltage (V)

56

7

8

9

10

4

25

°C

175

°C

90118_03

I

D = - 6.7 A

V

GS = - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

90118_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160 180

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