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SI5419DU Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI5419DU Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 69001 S11-0184-Rev. B, 07-Feb-11 Vishay Siliconix Si5419DU TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 100 TJ =25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.01 0.02 0.03 0.04 0.05 0.06 02 4 6 8 10 TJ =25 °C TJ = 125 °C ID =6.6 A VGS - Gate-to-Source Voltage (V) 0 30 40 10 20 Time (s) 11000 0.1 0.01 0.001 10 100 50 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs 1s 10 s Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS >minimum VGS at which RDS(on) is specified |
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