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SI3417DV Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI3417DV Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si3417DV Document Number: 62890 S13-1815-Rev. A, 12-Aug-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switches • Adaptor Switch • DC/DC Converter • For Mobile Computing/Consumer Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) d,e Qg (Typ.) - 30 0.0252 at VGS = - 10 V - 8 15 nC 0.0360 at VGS = - 4.5 V - 8 Ordering Information: Si3417DV-T1-GE3 (Lead (Pb)-free and Halogen-free) TSOP-6 Top View 6 4 1 2 3 5 3 mm 2.85 mm D D D D S G S G D P-Channel MOSFET Marking Code BH XX Lot Traceability and Date Code Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 8e A TC = 70 °C - 8e TA = 25 °C - 7.3a, b TA = 70 °C - 5.8a, b Pulsed Drain Current (t = 100 µs) IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 1.7a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 4.2 W TC = 70 °C 2.7 TA = 25 °C 2a, b TA = 70 °C 1.3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 40 62.5 °C/W Maximum Junction-to-Foot Steady State RthJF 25 30 Available |
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