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IRL640S Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte IRL640S
Spiegazioni elettronici  Power MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRL640S Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
S16-0763-Rev. D, 02-May-16
2
Document Number: 91306
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
--
62
°C/W
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
--
40
Maximum Junction-to-Case (Drain)
RthJC
--
1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
200
-
-
V
VDS Temperature Coefficient
V
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.27
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 5.0 V
ID = 10 A b
-
-
0.18
VGS = 4.0 V
ID = 8.5 A b
-
-
0.27
Forward Transconductance
gfs
VDS = 50 V, ID = 10 A b
16
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1800
-
pF
Output Capacitance
Coss
-
400
-
Reverse Transfer Capacitance
Crss
-
120
-
Total Gate Charge
Qg
VGS = 5.0 V
ID = 17 A, VDS = 160 V,
see fig. 6 and 13 b
--
66
nC
Gate-Source Charge
Qgs
--
9.0
Gate-Drain Charge
Qgd
--
38
Turn-On Delay Time
td(on)
VDD = 100 V, ID = 17 A,
Rg = 4.6 , RD = 5.7 , see fig. 10 b
-8.0
-
ns
Rise Time
tr
-83
-
Turn-Off Delay Time
td(off)
-44
-
Fall Time
tf
-52
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Gate Input Resistance
Rg
f = 1 MHz, open drain
0.3
-
1.2
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
17
A
Pulsed Diode Forward Current a
ISM
--
68
Body Diode Voltage
VSD
TJ = 25 °C, IS = 17 A, VGS = 0 V b
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b
-
310
470
ns
Body Diode Reverse Recovery Charge
Qrr
-3.2
4.8
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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